|
If you can't view the Datasheet, Please click here to try to view without PDF Reader . |
|
Datasheet File OCR Text: |
SI9926ADY New Product Vishay Siliconix Dual N-Channel 2.5-V (G-S) MOSFET PRODUCT SUMMARY VDS (V) 20 rDS(on) (W) 0.030 @ VGS = 4.5 V 0.040 @ VGS = 2.5 V ID (A) 6 5 D1 D2 SO-8 S1 G1 S2 G2 1 2 3 4 Top View N-Channel MOSFET N-Channel MOSFET 8 7 6 5 D1 D1 D2 D2 S1 S2 G1 G2 ABSOLUTE MAXIMUM RATINGS (TA = 25_C UNLESS OTHERWISE NOTED) Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current (TJ = 150_C)a _ Pulsed Drain Current Continuous Source Current (Diode Conduction)a Maximum Power Dissipationa Operating Junction and Storage Temperature Range TA = 25_C TA = 70_C TA = 25_C TA = 70_C Symbol VDS VGS 10 secs 20 "12 6 Steady State Unit V 4.8 3.8 30 A 1.0 1.25 0.8 -55 to 150 W _C ID IDM IS PD TJ, Tstg 5 1.7 2.0 1.3 THERMAL RESISTANCE RATINGS Parameter t v 10 sec Maximum Junction-to-Ambienta Maximum Junction-to-Foot (Drain) Notes a. Surface Mounted on 1" x 1" FR4 Board. Document Number: 71633 S-04055--Rev. A, 25-Jun-01 www.vishay.com Steady State Steady State RthJA RthJF Symbol Typical 50 80 30 Maximum 62.5 100 40 Unit _C/W C/W 1 SI9926ADY Vishay Siliconix New Product SPECIFICATIONS (TJ = 25_C UNLESS OTHERWISE NOTED) Parameter Static Gate Threshold Voltage Gate-Body Leakage Zero Gate Voltage Drain Current On-State Drain Currenta Drain-Source On-State Resistancea Forward Transconductancea Diode Forward Voltagea VGS(th) IGSS IDSS ID(on) rDS(on) gfs VSD VDS = VGS, ID = 250 mA VDS = 0 V, VGS = "12 V VDS = 20 V, VGS = 0 V VDS = 20 V, VGS = 0 V, TJ = 55_C VDS w 5 V, VGS = 4.5 V VGS = 4.5 V, ID = 6 A VGS = 2.5 V, ID = 5 A VDS = 15 V, ID = 6 A IS = 1.7 A, VGS = 0 V 20 0.023 0.030 22 0.7 1.2 0.030 0.040 S V 0.6 "100 1 25 V nA mA m A W Symbol Test Condition Min Typ Max Unit Dynamicb Total Gate Charge Gate-Source Charge Gate-Drain Charge Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Source-Drain Reverse Recovery Time Qg Qgs Qgd td(on) tr td(off) tf trr IF = 1.7 A, di/dt = 100 A/ms VDD = 15 V, RL = 15 W ID ^ 1 A, VGEN = 4.5 V, RG = 6 W VDS = 15 V, VGS = 4.5 V, ID = 6 A 13 3 3.3 22 40 50 20 40 35 60 75 30 80 ns 20 nC Notes a. Pulse test; pulse width v 300 ms, duty cycle v 2%. b. Guaranteed by design, not subject to production testing. TYPICAL CHARACTERISTICS (25_C UNLESS NOTED) Output Characteristics 30 VGS = 5 thru 3 V 2.5 V 24 I D - Drain Current (A) I D - Drain Current (A) 24 30 Transfer Characteristics 18 18 12 2V 12 TC = 125_C 6 25_C -55_C 6 1.5 V 0 0 2 4 6 8 10 0 0.0 0.5 1.0 1.5 2.0 2.5 3.0 VDS - Drain-to-Source Voltage (V) VGS - Gate-to-Source Voltage (V) www.vishay.com 2 Document Number: 71633 S-04055--Rev. A, 25-Jun-01 SI9926ADY New Product TYPICAL CHARACTERISTICS (25_C UNLESS NOTED) On-Resistance vs. Drain Current 0.08 2100 1800 r DS(on)- On-Resistance ( W ) C - Capacitance (pF) 0.06 Ciss 1500 1200 900 600 300 Crss 0.00 0 6 12 18 24 30 0 0 4 8 12 16 20 Coss Vishay Siliconix Capacitance 0.04 VGS = 2.5 V VGS = 4.5 V 0.02 ID - Drain Current (A) VDS - Drain-to-Source Voltage (V) Gate Charge 4.5 VDS = 10 V ID = 6 A 1.8 1.6 r DS(on)- On-Resistance ( W ) (Normalized) 1.4 1.2 1.0 0.8 0.6 0.4 -50 On-Resistance vs. Junction Temperature V GS - Gate-to-Source Voltage (V) 3.6 VGS = 4.5 V ID = 6 A 2.7 1.8 0.9 0.0 0 3 6 9 12 15 Qg - Total Gate Charge (nC) -25 0 25 50 75 100 125 150 TJ - Junction Temperature (_C) Source-Drain Diode Forward Voltage 20 0.10 On-Resistance vs. Gate-to-Source Voltage I S - Source Current (A) 10 r DS(on)- On-Resistance ( W ) 0.08 ID = 6 A 0.06 TJ = 150_C 0.04 TJ = 25_C 0.02 0 0 0.2 0.4 0.6 0.8 1.0 1.2 0.00 0 2 4 6 8 10 VSD - Source-to-Drain Voltage (V) VGS - Gate-to-Source Voltage (V) Document Number: 71633 S-04055--Rev. A, 25-Jun-01 www.vishay.com 3 SI9926ADY Vishay Siliconix New Product TYPICAL CHARACTERISTICS (25_C UNLESS NOTED) Threshold Voltage 0.4 ID = 250 mA 0.2 V GS(th) Variance (V) Power (W) 100 Single Pulse Power 80 -0.0 60 -0.2 40 -0.4 20 -0.6 -50 -25 0 25 50 75 100 125 150 0 0.001 0.01 0.1 Time (sec) 1 10 TJ - Temperature (_C) Normalized Thermal Transient Impedance, Junction-to-Ambient 2 1 Normalized Effective Transient Thermal Impedance Duty Cycle = 0.5 0.2 Notes: 0.1 0.1 0.05 0.02 t1 t2 1. Duty Cycle, D = t1 t2 PDM 2. Per Unit Base = RthJA = 80_C/W Single Pulse 0.01 10-4 10-3 10-2 10-1 1 Square Wave Pulse Duration (sec) 3. TJM - TA = PDMZthJA(t) 4. Surface Mounted 10 100 600 Normalized Thermal Transient Impedance, Junction-to-Case 2 1 Normalized Effective Transient Thermal Impedance Duty Cycle = 0.5 0.2 0.1 0.1 0.05 0.02 Single Pulse 0.01 10-4 10-3 10-2 Square Wave Pulse Duration (sec) 10-1 1 www.vishay.com 4 Document Number: 71633 S-04055--Rev. A, 25-Jun-01 |
Price & Availability of SI9926ADY |
|
|
All Rights Reserved © IC-ON-LINE 2003 - 2022 |
[Add Bookmark] [Contact Us] [Link exchange] [Privacy policy] |
Mirror Sites : [www.datasheet.hk]
[www.maxim4u.com] [www.ic-on-line.cn]
[www.ic-on-line.com] [www.ic-on-line.net]
[www.alldatasheet.com.cn]
[www.gdcy.com]
[www.gdcy.net] |